Ferroelectric memory devices having a plate line control circuit

ABSTRACT

Ferroelectric memory devices include a ferroelectric memory cell. The ferroelectric memory cell has at least one bit line and a plate line. A control circuit drives the at least one bit line with write data substantially concurrently with activation of the plate line during a write operation. The memory devices may also include a sense amplifier coupled to the ferroelectric memory cell and the control circuit may be further configured to deactivate the plate line substantially concurrently with activation of the sense amplifier during a read operation.

RELATED APPLICATION

This application claims priority to and is a divisional of parentapplication Ser. No. 11/029,616 filed Jan. 5, 2005, which applicationclaims priority to and is a divisional of U.S. patent application Ser.No. 10/358,550, filed Feb. 5, 2003, now U.S. Pat. No. 6,847,537 whichclaims the benefit of Korean Patent Application No. 2002-28062, filedMay 21, 2002, the disclosures of which are hereby incorporated herein byreference.

BACKGROUND OF THE INVENTION

The present invention relates to integrated circuit devices and, moreparticularly, to ferroelectric integrated circuit devices, such asmemory devices, and methods for operating the same.

Recently, ferroelectric memory devices using ferroelectric layers havebeen considered as an alternative approach for certain memoryapplications. Ferroelectric memory devices are generally divided intotwo categories. The first category includes devices using aferroelectric capacitor as described, for example, in U.S. Pat. No.5,523,964. The second category includes devices having a ferroelectricfield emission transistor (FET) as described, for example, in U.S. Pat.No. 5,198,994. Ferroelectric memory devices generally use polarizationinversion and remnant polarization characteristics of an includedferroelectric layer to provide desired properties to the memory devices.These devices may provide higher-speed read and write operations and/orlower power consumption than other types of memory devices.

Because polarization inversion of a ferroelectric layer results fromrotation of a dipole, ferroelectric memory devices may have an operationspeed over 100 times faster than other nonvolatile memory devices, suchas Electrical Erasable Programmable Read Only Memory (EEPROM) devices orflash memory devices. In addition, with optimized designs, ferroelectricmemory devices may result in write operation speeds ranging from severalhundreds of nanoseconds to several tens of nanoseconds. Such high speedoperations may even be comparable to the operating speed of DynamicRandom Access Memory (DRAM) devices. With respect to possible powersavings, EEPROM or flash memory devices typically require use of a highvoltage of about 18 volts (V) through about 22 V for a write operation.Ferroelectric memory devices generally only need about 2 V through about5 V for polarization inversion. Accordingly, they may be designed tooperate with a single low-voltage power supply.

Ferroelectric memory cells generally store a logic state based onelectric polarization of a ferroelectric capacitor as noted above. Theferroelectric capacitor typically has a dielectric material thatincludes a ferroelectric material, such as lead zirconate titanate(PZT). When voltages are applied to both electrodes (or plates) of aferroelectric capacitor, the ferroelectric material is generallypolarized in the direction of the resulting electric field. Theswitching threshold for changing the polarization state of theferroelectric capacitor is sometimes called a coercive voltage.

A ferroelectric capacitor typically exhibits a hysteresischaracteristic. Current generally flows into a ferroelectric capacitorbased on its polarization state. If a difference voltage between theelectrodes of the ferroelectric capacitor is higher than the coercivevoltage, the polarization state of the ferroelectric capacitor may bechanged based on the polarity of a voltage applied to the ferroelectriccapacitor. The capacitor's polarization state is generally maintainedeven after power-off, thus providing a ferroelectric memory device witha non-volatile characteristic. The ferroelectric capacitor may varybetween polarization states in approximately 1 nanosecond. Thus, adevice may be provided having a faster program time than non-volatilememories such as EPROMs and flash EEPROMs.

FIG. 1 illustrates a ferroelectric memory cell having a conventional onetransistor/one capacitor (1T/1C) structure. A ferroelectric memory cellMC is provided having one switching transistor Tr and one ferroelectriccapacitor Cf. One current electrode of the switching transistor Tr isconnected to a bit line BL, and the other thereof is connected to aplate line PL. As illustrated in FIG. 1, a voltage Vp that is applied tothe plate line PL. The voltage Vf is a division voltage (or a couplingvoltage) between both electrodes of the ferroelectric capacitor Cf. Thevoltage Vf corresponds to the bit line voltage.

Read and write operations for such a ferroelectric memory device can becarried out by applying a pulse signal to a plate line PL connected tothe ferroelectric capacitor Cf. As the ferroelectric capacitor generallyhas a high permittivity, the ferroelectric capacitor Cf may have a highcapacitance. Furthermore, as a large number of ferroelectric capacitorsare commonly connected to one plate line, a pulse signal applied to theplate line may have a long delay time (and/or a long rising time). Sucha long delay time may reduce the operating speed of a ferroelectricmemory, however, such a result may be unavoidable given the structure ofa ferroelectric memory device. To increase the operating speed of theferroelectric memory device, changes to the control logic other thanadjusting the delay time of a pulse signal applied to the plate line maybe desired when the delay time limitation is reached.

SUMMARY OF THE INVENTION

Embodiments of the present invention include ferroelectric memorydevices having a ferroelectric memory cell. The ferroelectric memorycell has at least one bit line and a plate line. A control circuitdrives the at least one bit line with write data substantiallyconcurrently with activation of the plate line during a write operation.The memory devices may also include a sense amplifier coupled to theferroelectric memory cell and the control circuit may be furtherconfigured to deactivate the plate line substantially concurrently withactivation of the sense amplifier during a read operation.

In other embodiments of the present invention, the control circuit isconfigured to activate a column select signal coupled to theferroelectric memory cell to drive the at least one bit line with writedata. A leading edge of the plate line may correspond to activation ofthe plate line and a trailing edge of the plate line may correspond todeactivation of the plate line. A leading edge of the column selectsignal may drive the at least one bit line with write data and atrailing edge of the column select signal may decouple the at least onebit line from the write data.

In further embodiments of the present invention, the control circuit isconfigured to drive the at least one bit line with write data beforeactivation of the plate line during the write operation. The controlcircuit may also be configured to deactivate the plate linesubstantially concurrently with activation of the sense amplifier duringthe write operation and/or a read operation. The control circuit may befurther configured to deactivate the plate line during the readoperation before activation of a column select signal coupled to theferroelectric memory cell that drives the at least one bit line withwrite data.

In other embodiments of the present invention, ferroelectric memorydevices are provided including a ferroelectric memory cell having aplate line. A sense amplifier is coupled to the ferroelectric memorycell. A control circuit deactivates the plate line substantiallyconcurrently with activation of the sense amplifier during a readoperation. The ferroelectric memory devices may further comprise acolumn select signal that couples the at least one bit line to a datasignal and the control circuit may be configured to deactivate the plateline during the read operation before activation of a column selectsignal. The control circuit may be configured to drive the at least onebit line with write data substantially concurrently with activation ofthe plate line during a write operation.

In further embodiments of the present invention, methods are providedfor writing to a memory cell of a ferroelectric memory device, thememory cell having at least one bit line and a plate line. The methodincludes substantially concurrently driving the at least one bit linewith write data and activating the plate line.

In other embodiments of the present invention, substantiallyconcurrently driving the at least one bit line with write data andactivating the plate line includes driving the at least one bit linewith write data and then activating the plate line. The memory cell maybe coupled to a sense amplifier and substantially concurrently drivingthe at least one bit line with write data and activating the plate linemay be followed by substantially concurrently deactivating the plateline and activating the sense amplifier. In particular embodiments, theplate line is deactivated during a read operation before activation of acolumn select signal coupled to the memory cell that couples the atleast one bit line to a data signal.

In further embodiments of the present invention, methods are providedfor reading from a memory cell of a ferroelectric memory device, thememory cell having a plate line and a sense amplifier coupled to thememory cell. The method includes substantially concurrently deactivatingthe plate line and activating the sense amplifier. The ferroelectricmemory cell may further include at least one bit line and the device mayfurther comprise a column select signal that couples the at least onebit line to a data signal. In such embodiments, the method may furthercomprise deactivating the plate line before activation of the columnselect signal.

In accordance with other embodiments of the present invention, there isprovided a ferroelectric memory device which includes a ferroelectricmemory cell coupled to a word line, a plate line, and a bit line. Aplate line driver drives the plate line, and a row decoder drives theword line in response to a row address. A sense amplifier senses andamplifies a voltage on the bit line, and a column select circuitselectively connects the bit line with a data line in response to acolumn address. A data input circuit transfers data from the outside tothe data line, and a control logic for controlling operational timing ofthe plate line driver, the column select circuit, the sense amplifiercircuit, and the data input circuit. The control logic generates firstto fourth control signals, the plate line driver enabled by the firstcontrol signal, the sense amplifier circuit enabled by the second andthird control signals, and the column select circuit enabled by thefourth control signal. The fourth control signal is activated before theactivation of the first control signal in a write operation.

In this embodiment, the data from the outside is loaded on the data linevia the data input circuit before the activation of the column selectcircuit, in the write operation. The control logic enables the columnselect circuit after the activation of the sense amplifier circuit in aread operation. The control logic comprises a first signal generator forsequentially generating the first control signal and the second andthird control signals in response to a chip enable signal, and a secondsignal generator for generating the fourth control signal in response toa write enable signal, the chip enable signal, and the first sense ampcontrol signal.

In this embodiment, the second signal generator activates the fourthcontrol signal before the activation of the first control signal inresponse to the activation of the write enable signal indicating thewrite operation. The activated column control signal is inactivateddepending on the inactivation of the second control signal, in the writeoperation.

In this embodiment, the second signal generator activates the columncontrol signal in response to the activation of the second controlsignal, in a read operation. The activated column control signal isinactivated depending on the inactivation of the second control signal,in the read operation.

In this embodiment, the first signal generator inactivates the firstactivated control signal after the activation of the second and thirdcontrol signals, in read and write operations.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features of the present invention will be more readily understoodfrom the following detailed description of the invention when read inconjunction with the accompanying drawings, in which:

FIG. 1 is a circuit diagram of a conventional ferroelectric memory cell;

FIG. 2 is a graph illustrating a hysterisis characteristic of aferroelectric material interposed between electrodes of a ferroelectriccapacitor of a ferroelectric memory cell according to some embodimentsof the present invention;

FIG. 3A is a timing diagram illustrating a read operation of aconventional ferroelectric memory device;

FIG. 3B is a timing diagram illustrating a write operation of aconventional ferroelectric memory device;

FIG. 4 is a block circuit diagram illustrating a ferroelectric memorydevice according to some embodiments of the present invention;

FIG. 5 is a circuit diagram illustrating a portion of the control logiccircuit of FIG. 4 according to some embodiments of the presentinvention;

FIG. 6A is a timing diagram illustrating a write operation of aferroelectric memory device according to some embodiments of the presentinvention; and

FIG. 6B is a timing diagram illustrating a read operation of aferroelectric memory device according to some embodiments of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which typical embodiments ofthe invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In thedrawings, the relative sizes of regions may be exaggerated for clarity.It will be understood that when an element such as a device or circuitcomponent is referred to as being “couple” or “connected” to anotherdevice, it can be directly coupled to the other device or interveningdevices may also be present. In contrast, when a device is referred toas being “directly” coupled or connected to another device, there are nointervening devices present. Furthermore, while timing diagrams usedherein generally associate rising edges and a high level with activationand falling edges and a low level with deactivation, it is to beunderstood that embodiments using the opposite logic state also fallwithin the scope of the present invention. Moreover, each embodimentdescribed and illustrated herein includes its complementary conductivitytype embodiment as well.

Integrated circuit devices and methods for forming such devices inaccordance with embodiments of the present invention will now bedescribed with reference to FIGS. 2-6B. To simplify understanding of thepresent disclosure, the various embodiments of the present inventiondescribed herein will be described with reference to a memory device,more particularly, a random access memory device. However, the presentinvention can be applied to devices other than memory devices.

FIG. 2 is a graph illustrating a hysterisis switching loop of aferroelectric capacitor. In FIG. 2, the abscissa indicates the potentialdifference (V) between the electrodes of the ferroelectric capacitor(i.e., the voltage between the electrodes). The ordinate indicates theamount of charge induced on a surface of the ferroelectric capacitor dueto spontaneous polarization, that is, the degree of polarization (P)(μC/cm²). The point marked “C” corresponds to the first polarizationstate P1 and the point marked “A” corresponds to the second polarizationstate P2. The first polarization state P1 corresponds to a first datastate, shown as a high “H” data stored in the ferroelectric capacitorCf. The second polarization state P2 corresponds to a second data state,shown as a low “L” data stored in the ferroelectric capacitor Cf.

In order to detect a polarization state of the ferroelectric capacitorCf, a division voltage Vf generated between the electrodes of theferroelectric capacitor Cf becomes a V1 voltage level when theferroelectric capacitor Cf has the first polarization state P1 and a V2voltage level when the ferroelectric capacitor Cf has the secondpolarization state P2. Assuming that the capacitance of a load capacitorCb1 (FIG. 1) has a slope of the line L1, the division voltage Vf can bevaried based on the capacitance of the load capacitor Cb1. By comparingthe division voltage Vf with a predetermined reference voltage, it ispossible to detect a polarization state of the ferroelectric capacitorCf. In other words, it may be possible to detect whether theferroelectric capacitor Cf has the first polarization state P1 or thesecond polarization state P2.

FIG. 3A is a timing diagram illustrating a read operation of aconventional ferroelectric memory device. As shown in time period T0,once a read operation commences, a selected word line WL is activated,based on decoding of an externally applied address, to turn on theswitching transistors Tr (FIG. 1) of memory cells connected to theactivated word line. At the end of the T0 period, following activationof the word line WL, a bit line BL connected to each of theferroelectric memory cells MC is grounded and then the bit line pairBL/BLR is placed in a floating state. Data stored in the ferroelectricmemory cells MC of the activated word line is then transferred ontocorresponding bit lines BL/BLR during time period T1. More particularly,as shown in FIG. 3A, a pulse signal of a Vcc level is applied to theplate line PL, that is, to one electrode of each of the ferroelectriccapacitors Cf coupled to the plate line PL. As a result, a divisionvoltage (or a coupling voltage) Vf is generated between the electrodesof each of the ferroelectric capacitors Cf. The division voltage Vf maybe read as will now be further described.

When “1” (or “H”) data is stored in a ferroelectric capacitor Cf (i.e.,when the ferroelectric capacitor Cf has the first polarization stateP1), the Vf voltage becomes a V1 voltage level. Accordingly, thepolarization state of the ferroelectric capacitor Cf storing “1” data ischanged from the point “C” to the point “C1” in FIG. 2. When “0” (or“L”) data is stored in the ferroelectric capacitor Cf (that is, when theferroelectric capacitor Cf has the second polarization state P2), the Vfvoltage becomes a V2 voltage level. Accordingly, the polarization stateof the ferroelectric capacitor Cf storing “0” data is changed from point“A” to point “D1.” A division voltage Vf dependent on the stored data ismeasured based on the resulting voltage data value induced on acorresponding bit line (or across a corresponding bit line pair).

During time period T2, the division voltage Vf (in FIG. 2, V1 or V2)induced on each bit line BL (or bit line pair BL/BLR) is amplified toeither a ground voltage or an operating voltage (such as a power supplyvoltage) through a comparison operation, for example, with a referencevoltage. As a sense amplification operation is carried out (SAP/SANactivated) and a column selection signal YSW is activated, data on aselected bit line(s) BL (BL/BLR) is transferred to a data line(s) SDL(SDL/SDLb) through, for example, a column pass gate circuit.

A ferroelectric capacitor Cf that originally stores “0” data generallyhas a polarization state, shown by a point “D1” in FIG. 2, that is lessthan at the point “D” as a result of a read operation carried out in theT1 period. A sense amplification operation is carried out in the periodT2 where the polarization state of a ferroelectric capacitor Cf isdetected. In time period T3, the plate line PL signal deactivates (shownas a transition from a high level to a low level). In other words, aground voltage is applied to the plate line PL instead of a power supplyvoltage. As a result of this bias condition, a data restore operation isprovided for ferroelectric capacitor(s) Cf that store “1” data. Readoperations complete with an initialization operation in time period T4.

FIG. 3B is a timing diagram illustrating a write operation for aconventional ferroelectric memory device. Once a write operationcommences, in time period T0, a selected word line WL is activated,based on decoding of an externally applied address, to turn on switchingtransistors Tr of ferroelectric memory cells MC connected to theactivated word line. Also during time period T0, data to be written to aferroelectric memory cell(s) is loaded on a data line(s) through adecoding process. The bit line BL (or bit line pair BL/BLR) connected toeach of the ferroelectric memory cells MC is grounded and then placed ina floating state. During the time period T1, responsive to a pulsesignal of a Vcc level applied to the plate line PL, data stored inferroelectric memory cells MC of the activated word line WL istransferred onto corresponding bit lines.

During time period T2, a sense amplification operation is performed(SAP/SAN activated) and a column selection signal YSW is activated. As aresult, external data on a data line(s) SDL (SDL/SDLb) may betransferred to the selected bit line(s) BL (BL/BLR). Thus, the voltageon the selected bit line or bit line pairs is varied responsive to dataon the data line SDL (SDL/SDLb). For example, when a bit line BL is at aground voltage and a data line SDL is at a power supply voltage level,the voltage of the bit line BL is changed from the ground voltage to thepower supply voltage. When the bit line BL and the data line SDL bothare at the ground voltage or the power supply voltage, the voltage ofthe bit line BL is maintained at an unchanged logic level. Because theplate line PL is activated to the power supply voltage level in the T2period, “0” data may be stored in a memory cell(s). A ferroelectriccapacitor Cf that stores “0” data has a polarization state of the point“D” in FIG. 2.

In the time period T3, the plate line PL signal transitions from a highlevel to a low level (deactivates). Thus, a ground voltage is applied tothe plate line PL instead of a power supply voltage. Under this biascondition, a data restore operation may be carried out with respect to aferroelectric capacitor that stores “1” data while the external data of“1” is stored in a memory cell(s). An initialization operation isperformed in a period T4 to complete the read operation.

As described above, conventional read and write operations aregenerally, respectively, carried out over five time periods T0-T4,wherein an address is decoded in the period T0, cell data is transferredto a bit line in the period T1, “0” data is written or restored in theperiod T2, “1” data is written or restored in the period T3 and aninitialization operation is carried out in the period T4.

FIG. 4 is a block circuit diagram of a ferroelectric memory device 100according to some embodiments of the present invention. As shown in FIG.4, the ferroelectric memory device 100 includes a memory cell array 110,which includes a plurality of ferroelectric memory cells MC arranged ina matrix of rows and columns. Each row is defined by a word line WL anda plate line PL. Alternatively, other arrangements may be provided, forexample, where each row is formed so that one plate line is shared bytwo word lines. Each column is illustrated as being formed of a pair ofbit lines BL and BLR. For ease of understanding the present invention,only one ferroelectric memory cell MC is illustrated in FIG. 4 and theillustrated ferroelectric memory cell MC includes a switching transistorTr and a ferroelectric capacitor Cf. One current electrode of theswitching transistor Tr is connected to the bit line BL and the other isconnected to one electrode of the ferroelectric capacitor Cf. A gate ofthe switching transistor Tr is connected to the word line WL. The otherelectrode of the ferroelectric capacitor Cf is connected to the plateline PL.

Also shown in the device 100 of FIG. 4 is a sense amplifier AMP that isconnected between the bit lines BL and BLR and senses and amplifies avoltage difference between the bit lines BL and BLR of each pair inresponse to control signals SAN and SAP. A chip enable buffer 120receives an external chip enable signal XCEb to generate an internalchip enable signal ICE. The internal chip enable signal ICE isdeactivated when the control signal SAP is deactivated (e.g., inresponse to a high-low transition of the control signal SAP). A rowaddress buffer 130 receives row address information in response to theinternal chip enable signal ICE. A row decoder and plate line driverblock 140 selects one of the rows in response to a row address RA fromthe row address buffer 130 and drives a word line of the selected rowwith a word line voltage VPP. A column address buffer 150 receivescolumn address information in response to the internal chip enablesignal ICE. A column decoder 160 decodes a column address CA from thecolumn address buffer 150 in response to a control signal CDENb andactivates a column selection signal YSW based on the decoding result.

As illustrated in FIG. 4, a column pass gate circuit 170 selectsparticular column(s) in response to the column selection signal YSW fromthe column decoder 160. The selected columns are connected to a data busDB via the column pass gate circuit 170. As described above, each columnin the embodiments of FIG. 4 is formed of a pair of bit lines, and thedata bus DB is formed of data line pairs. For example, a pair of bitlines BL and BLR is electrically connected to a corresponding pair ofdata lines SDL and SDLb through the column pass gate circuit 170. For aread operation, read-out data on the data bus DB is output externallyvia a read driver 180, a data output buffer 190, and an input/outputdriver 200. For a write operation, externally applied data istransferred onto the data bus DB via the input/output driver 200, a datainput buffer 210, and a write driver 220. The drivers 180 and 220 andthe buffers 190 and 210 may be selectively controlled by a control logic230 based on a read and a write operation sequence.

The control logic 230 may operate responsive to the internal chip enablesignal ICE, a write enable signal WEb from a buffer 240, and an outputenable signal OEb from a buffer 250. As shown in FIG. 4, the controllogic 230 includes a delay chain 231 for sequentially generating controlsignals PPL, SAN and SAP, and a signal generator 232 for generating thecontrol signal CDENb that is used to control the column decoder 160.More particularly, the delay chain 231 of the control logic 230sequentially generates the control signals PPL, SAP and SAN in responseto activation of the internal chip enable signal ICE. The signalgenerator 232 generates the control signal CDENb in response to theinternal chip enable signal ICE, the control signal SAP, and the writeenable signal WEb. The control signal PPL is transferred to the rowdecoder and plate line driver block 140, which drives a plate line PL ofthe selected row with a predetermined voltage in response to the controlsignal PPL. The control signals SAP and SAN are provided to the senseamplifier AMP, which operates responsive to the control signals SAN andSAP. The control signal CDENb is provided to the column decoder 160,which operates responsive to the control signal CDENb.

FIG. 5 illustrates embodiments of the signal generator 232 in thecontrol logic 230 illustrated in FIG. 4 according to some embodiments ofthe present invention. As illustrated in FIG. 5, the signal generator232 operates responsive to control signals ICE, SAP and WEb, andincludes NAND gates G10, G12, and G14, an inverter INV10, and shortpulse generators 233 and 234. The signal generator 232 operatesresponsive to activation of the internal chip enable signal ICE. For theillustrated embodiment of a signal generator 232, activation andinactivation timings of the control signal CDENb are controlleddifferently for read and write operations. During a write operation, thecontrol signal CDENb may be activated in synchronization with activationof the WEb signal and may be deactivated in synchronization withdeactivation of the SAP signal. During a read operation, the controlsignal CDENb may be activated and deactivated in synchronization withactivation and deactivation of the SAP signal, respectively,irrespective of the WEb signal.

By way of example, when the write enable signal WEb transitions from ahigh level to a low level and the control signal SAP is at a low level,an output of the NAND gate G10 transitions from the low level to thehigh level. The short pulse signal circuit 233 generates a short pulsesignal SP1 in response to a low-to-high transition of the output of theNAND gate G10. This enables the control signal CDENb to transition fromthe high level to the low level. In other words, the control signalCDENb may be activated in synchronization with a high-to-low transitionof the write enable signal WEb. The short pulse generator 234 generatesa short pulse signal SP2 when an output of the inverter INV10transitions from the low level to the high level. This makes the controlsignal CDENb transition from the low level to the high level. In otherwords, the activated control signal CDENb is deactivated insynchronization with a high-to-low transition of the control signal SAP.

For a read operation (or while the write enable signal WEb is maintainedhigh), the NAND gate G10 outputs a signal having a low-to-hightransition when the control signal SAP transitions from the low level tothe high level. The short pulse signal circuit 233 generates the shortpulse signal SP1 responsive to a low-to-high transition of an outputsignal from the NAND gate G10. This makes the control signal CDENbtransition from the high level to the low level. Accordingly, thecontrol signal CDENb is activated in synchronization with a high-to-lowtransition of the write enable signal WEb. Subsequently, when thecontrol signal SAP transitions from the high level to the low level, theshort pulse generator 234 generates the short pulse signal SP2responsive to an output signal of the inverter INV10. This enables thecontrol signal CDENb to transition from the low level to the high level.Accordingly, the control signal CDENb is deactivated in synchronizationwith a high-to-low transition of the control signal SAP.

FIG. 6A is a timing diagram illustrating a write operation of aferroelectric memory device according to some embodiments of the presentinvention. Once a write operation starts, the XCEb and XWEb signalstransition from a high level to a low level in the time period WT0. Asthe XCEb signal transitions from the high level to the low level, rowand column address buffers 130 and 150 (FIG. 4) respectively receiveexternal row and column addresses responsive to an internal chip enablesignal ICE. The row decoder and plate line driver block 140 selects arow, in response to a row address RA from the row address buffer 130,and drives a word line of the selected row with a predetermined wordline voltage. Substantially simultaneously, the signal generator 232 ofcontrol logic 230 activates the control signal CDENb low when the XWEbsignal transitions from the high level to the low level. The columndecoder 160 activates the column selection signal YSW responsive to acolumn address CA from the column address buffer 150 when the controlsignal CDENb is activated low. Thus, decoding of the row and columnaddresses is carried out in the WT0 period.

In time period WT1, as the column selection signal YSW is activated,external data on the data bus DB is transferred to columns that areselected through the column pass gate circuit 170. The delay chain 231of the control logic 230 activates a control signal PPL responsive tothe internal chip enable signal ICE. The row decoder and plate linedriver block 140 drives the plate line PL of the selected row inresponse to activation of the control signal PPL. When the plate line PLis driven (activated), data stored in memory cells of the selected rowis transferred onto corresponding bit lines while a write operation mayalso be carried out for cells to receive “0” data. More particularly,when a ground voltage corresponding to “0” data is applied to a bit lineand a power supply voltage is applied to a plate line PL, “0” of writedata bits transferred onto the selected columns are written intocorresponding memory cells. With reference to FIG. 2, a ferroelectriccapacitor in a memory cell that stores “0” data has a polarization stateof “D.”

The control logic 230 activates the control signal SAP high and thecontrol signal SAN low a selected time delay period after the controlsignal PPL is activated. The control logic 230 activates the controlsignals SAP and SAN and substantially concurrently deactivates thecontrol signal PPL. As a result, the plate line PL signal transitionsfrom a high level of a power supply voltage to a low level of a groundvoltage (deactivates). Under this voltage bias condition, “1” write databits are written in corresponding memory cells having “1” data bits tobe written while a data restore operation is performed with respect toferroelectric capacitors that already were storing “1” data. Thus,restore and write operations for “1” data are carried out in period WT2.

The exemplary write operations of FIG. 6A are associated with thecorresponding data states with reference to the curve of FIG. 2 at thebottom of FIG. 6A. Thus, a ferroelectric capacitor corresponding to “0”data (D0) has a polarization state of “A” and a ferroelectric capacitorcorresponding to “1” data (D1) has a polarization state of “B” after theoperations in period WT1 and WT2.

After the data restore and write operations are performed in the WT2period, an initialization operation for the ferroelectric memory deviceis performed in the WT3 period. More particularly, as the control signalSAP is deactivated (low), the internal chip enable signal ICE isdeactivated (low). As a result, outputs of the buffers 130 and 150 andthe block 140 are initialized sequentially. At substantially the sametime, the control signal CDENb is deactivated in synchronization with ahigh-to-low transition of the control signal SAP so that an output ofthe column decoder 160 is reset.

As described for the illustrated embodiments of the present inventionduring a write operation, while data stored in memory cells of aselected row is transferred onto bit lines (i.e., while the bit linesare coupled to the cell capacitors), a write operation may be carriedout for “0” data. The control logic 230 performs a control operation sothat write data from the external is transferred onto selected bitlines. Therefore, by carrying out both these operations in a single timeperiod, the operating speed of a ferroelectric memory device accordingto embodiments of the present invention may be increased by a period (arestore period of “0” data) as compared with the write operationillustrated in the timing diagram of FIG. 3B.

FIG. 6B is a timing diagram illustrating a read operation according tosome embodiments of the present invention. When the read operationbegins, an XCEb signal transitions from a high level to a low level inthe RT0 time period. As the XCEb signal transitions from the high levelto the low level, row and column address buffers 130 and 150 (FIG. 4)respectively receive external row and column addresses responsive to theinternal clock signal ICE. The row decoder and plate line driver block140 selects one of rows, responsive to the row address RA from thebuffer 130, and drives the word line WL of the selected row with apredetermined word line voltage. Unlike the above-described writeoperation, the control signal CDENb is maintained high as the XWEbsignal is at the high level. Thus, the row address is decode during theRT0 period.

The delay chain 231 of the control logic 230 activates the controlsignal PPL responsive to the internal chip enable signal ICE. The block140 drives (activates) the plate line PL of the selected row responsiveto activation of the control signal PPL. With the plate line PLactivated, data in memory cells of the selected row is transferred ontobit lines. At this time, a ferroelectric capacitor storing “0” data hasa polarization state of “D1” and a ferroelectric capacitor storing “1”data has a polarization state of “C1” (FIG. 2).

During the RT1 time period, the control logic 230 activates the controlsignal SAP high and the control signal SAN low. This enables voltages onbit lines BL and BLR of each pair to be amplified either up,respectively, to a power supply voltage/ground voltage or to the groundvoltage/power supply voltage by the sense amplifier (i.e., activates thesense amplifier). As the plate line PL is activated to the power supplyvoltage, the polarization state of a ferroelectric capacitor storing “0”data is changed from “D1” to “D” (FIG. 2). As further illustrated in theembodiments of FIG. 6B, the plate line PL is deactivated promptly afterthe sense amplifier AMP is activated responsive to activation of thecontrol signals SAP and SAN.

The signal generator 232 of the control logic 230 activates the controlsignal CDENb responsive to a low-to-high transition of the controlsignal SAP. The column decoder 160 activates the column selection signalYSW responsive to a column address CA from the buffer 150 when thecontrol signal CDENb is activated low. When the column selection signalYSW is activated, data on selected columns is transferred onto the databus DB through the column pass gate circuit 170. The data on the databus DB is externally output through the read driver 180, the data outputbuffer 190, and the input/output driver 200 under the control of thecontrol logic 230. While externally outputting the read-out data, a datarestore operation is performed with respect to a ferroelectric capacitorthat originally stores “1” data. Thus, the restore operation for “1”data is carried out in the RT2 time period.

After the data restore operation, an initialization operation of theferroelectric memory device is performed in the RT3 time period. Moreparticularly, as the control signal SAP is inactivated low, the internalchip enable signal ICE is inactivated low. This causes outputs of thebuffers 130 and 150 and the block 140 to be sequentially initialized. Atsubstantially the same time, the control signal CDENb is inactivated,responsive to a high-to-low transition of the control signal SAP, sothat an output of the column decoder 160 is reset.

For write and read operations according to embodiments of the presentinvention, the plate line PL is inactivated after operation of the senseamplifier AMP. If the plate line PL is inactivated before operation ofthe sense amplifier AMP, a known depolarization phenomenon may arise,which may result in a sensing margin decrease. For example, in FIG. 2,the polarization state of a ferroelectric capacitor that stores “0” datais changed to a point “A1” from a point “A.” Such a depolarizationphenomenon is further described in U.S. Pat. No. 5,579,258 entitled“FERROELECTRIC MEMORY”. Accordingly the plate line PL may be inactivatedafter the sense amplifier AMP operates (or after a bit line is set to aground voltage) as described for the embodiments of the presentinvention shown in FIGS. 6A and 6B. Thus, the time period from operationof the sense amplifier AMP to a high-to-low (deactivation) transition ofthe plate line signal may be shorter than a high-going (rise) time of abit line that is connected to a ferroelectric memory cell having “1”data that is amplified by the sense amplifier AMP.

As described above, for some embodiments of the present invention, whiledata in a memory cell(s) of a selected row is transferred to a bitline(s) (i.e., the cell(s) are coupled to the bit lines), a writeoperation may be performed for “0” data. As a result, the time neededfor a write operation may be shortened. In further embodiments, during aread operation, while data in a memory cell(s) of a selected row istransferred to a bit line(s), a plate line is inactivated promptly afteroperation (activation) of a sense amplifier. Thus, the time needed for arestore operation of “0” data may be shortened. Accordingly, theoperating speed of ferroelectric memory devices according to embodimentsof the present invention may be improved.

It should be noted that many variations and modifications may be made tothe embodiments described above without substantially departing from theprinciples of the present invention. All such variations andmodifications are intended to be included herein within the scope of thepresent invention, as set forth in the following claims.

1. A ferroelectric memory device comprising: a ferroelectric memory cellcoupled to a word line, a plate line, and a bit line; a plate linedriver for driving the plate line; a row decoder for driving the wordline in response to a row address; a sense amplifier for sensing andamplifying a voltage on the bit line; a column select circuit forselectively connecting the bit line with a data line in response to acolumn address; a data input circuit for transferring data from theoutside to the data line; and a control logic for controllingoperational timing of the plate line driver, the column select circuit,the sense amplifier circuit, and the data input circuit, wherein thecontrol logic generates first to fourth control signals, the plate linedriver enabled by the first control signal, the sense amplifier circuitenabled by the second and third control signals, and the column selectcircuit enabled by the fourth control signal; and wherein the fourthcontrol signal is activated before the activation of the first controlsignal in a write operation.
 2. The ferroelectric memory device of claim1, wherein the data from the outside is loaded on the data line via thedata input circuit before the activation of the column select circuit,in the write operation.
 3. The ferroelectric memory device of claim 1,wherein the control logic enables the column select circuit after theactivation of the sense amplifier circuit in a read operation.
 4. Theferroelectric memory device of claim 1, wherein the control logiccomprises: a first signal generator for sequentially generating thefirst control signal and the second and third control signals inresponse to a chip enable signal; and a second signal generator forgenerating the fourth control signal in response to a write enablesignal, the chip enable signal, and the first sense amp control signal.5. The ferroelectric memory device of claim 4, wherein the second signalgenerator activates the fourth control signal before the activation ofthe first control signal in response to the activation of the writeenable signal indicating the write operation.
 6. The ferroelectricmemory device of claim 5, wherein the activated column control signal isinactivated depending on the inactivation of the second control signal,in the write operation.
 7. The ferroelectric memory device of claim 4,wherein the second signal generator activates the column control signalin response to the activation of the second control signal, in a readoperation.
 8. The ferroelectric memory device of claim 7, wherein theactivated column control signal is inactivated depending on theinactivation of the second control signal, in the read operation.
 9. Theferroelectric memory device of claim 5, wherein the first signalgenerator inactivates the first activated control signal after theactivation of the second and third control signals, in read and writeoperations.